PART |
Description |
Maker |
IDT72V8981 IDT72V8981DB IDT72V8981J IDT72V8981J8 7 |
From old datasheet system 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128 128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 3.3V
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Integrated Device Technology IDT
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AAT3215IGV-25-T1 AAT3215IGV-27-T1 AAT3215IGV-285-T |
150mA CMOS High Performance LDO 150mA的LDO稳压器的CMOS高性能 128 x 128 pixel format, LED or EL Backlight available
|
Advanced Analogic Technologies, Inc. ANALOGICTECH[Advanced Analogic Technologies]
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AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
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ATF22V10 ATF22V10B ATF22V10B-10JC ATF22V10B-10JI A |
High- Performance EE PLD FLASH PLD, 25 ns, PDSO24 High- Performance EE PLD FLASH PLD, 25 ns, PDIP24 Single Supply, Dual SPST Switch FLASH PLD, 15 ns, PDIP24 High- Performance EE PLD FLASH PLD, 15 ns, PDIP24 High- Performance EE PLD FLASH PLD, 15 ns, PDSO24 High- Performance EE PLD FLASH PLD, 10 ns, PDIP24 High- Performance EE PLD FLASH PLD, 15 ns, PQCC28 High- Performance EE PLD FLASH PLD, 10 ns, CQCC28 High- Performance EE PLD FLASH PLD, 15 ns, CDIP24 High- Performance EE PLD FLASH PLD, 7.5 ns, PDIP24 High- Performance EE PLD FLASH PLD, 7.5 ns, PDSO24 High- Performance EE PLD FLASH PLD, 10 ns, PDSO24 3.3V, 1 Output, LVTTL to LVPECL Clock Converter CAP 470PF 16V 5% X7R SMD-0603 TR-7 PLATED-NI/SN High-performance EE PLD
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Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation] http://
|
IDT72V70180PF |
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128 3.3V Power Supply
|
Integrated Device Technology
|
AM29PL320DB60R AM29PL320DT90 AM29PL320DB70 AM29PL3 |
32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory 1M X 32 FLASH 3V PROM, 60 ns, PBGA84 32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory 32兆位米16 1个M × 32位)的CMOS 3.0伏,不仅具备高性能页面模式闪存
|
Spansion, Inc. Spansion Inc. Advanced Micro Devices
|
AM29F200A-1 AM29F200AB-120DGC AM29F200AB-120DGC1 A |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash MemoryDie Revision 1 PCB COPPER CLAD 6X9 1/32 2-SIDE DIN Audio Connector; Number of Contacts:5; Contact Termination:Solder; Mounting Type:Panel; Gender:Receptacle; Contact Plating:Silver; Series:C091A 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 256K X 8 FLASH 5V PROM, 90 ns, UUC42 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位256亩x 8-Bit/128亩x 16位).0伏的CMOS只,扇区闪存模修 M39012 MIL RF CONNECTOR 2兆位56亩x 8-Bit/128亩x 16位).0伏的CMOS只,扇区闪存模修 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位56亩x 8-Bit/128亩x 16位).0伏的CMOS只,扇区闪存模修
|
AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
V436416S04VCTG-75 |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp] Mosel Vitelic, Corp. Mosel Vitelic Corp
|
V43644Y04VTG-10PC |
3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM
|
Mosel Vitelic, Corp.
|
V826516K04S |
2.5 VOLT 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
|
MOSEL[Mosel Vitelic, Corp]
|
V43728S04VCTG-75 |
3.3 VOLT 8M x 72 HIGH PERFORMANCE PC133 UNBUFFERED ECC SDRAM MODULE
|
MOSEL[Mosel Vitelic, Corp]
|
V43728S04VCTG-10PC |
3.3 VOLT 8M x 72 HIGH PERFORMANCE PC100 UNBUFFERED ECC SDRAM MODULE
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
|
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